Lowest R at 650 V
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New 650 V devices based on Wolfspeed’s latest third generation C3M™ MOSFET technology further push Silicon Carbide advantages over silicon in 400V applications
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When compared to silicon devices, the new Silicon Carbide MOSFETs lower switching losses by 75 percent and conduction losses by 50 percent, while potentially increasing system power density by 300 percent.
Normalized R vs Temp
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The higher switching frequencies and low R change over temperature reduce the size and weight of the transformer inductors, and thermal management components, bringing down the BoM cost of systems such as: EV OBC, Fast Charger, ESS, Industrial PSU.
WOLFSPEED 650 V SILICON CARBIDE MOSFETS VS COMPETING TECHNOLOGIES
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The enterprise IT market, where it is easier to achieve Energy Star’s new Titanium standard with over 98.5% efficiency and THD below 4% under stringent load conditions, while providing additional savings in cooling costs.
The automotive market, where higher frequencies reduce the size and weight of on-board chargers (OBCs) while enabling bi-directionality necessary for taking advantage of smart grids. For instance, the MOSFETs can be used to design a 6.6-kW OBC that takes 90VAC - 265VAC input and provides 250VDC - 450VDC output with over 96.5% efficiency.
The telecom power market where cost savings are realized not just from the lower losses and lower system cost but also from the space saved.
Other industrial switch mode power supplies that require the highest levels of efficiency, such as a DC-DC converter
