n-type wafers are SiC wafers doped with nitrogen to encourage conductivity. They are used primarily for Power devices.
N = n-type
What’s your application?
Impurities in Wolfspeed’s semi-insulating silicon carbide wafers are at background levels, hence our product is a high-purity, semi-insulating (HPSI) substrate. HPSI are preferred substrate for GaN and other nitride epitaxy RF devices due to improved thermal conductivity over semi-insulating SiC wafers doped with deep-level impurities.
T = HPSI
Please contact Materials Sales for information.
Other
Better value
Expected higher yield
R = Research
P = Production
Is your application produced at commercial scale or a limited use research application?
Diameter: n-type
Wolfspeed only offers circular wafers. We do not offer squares or boules.
Primary flat
G = 150 mm
Wolfspeed is not yet selling 200 mm at the commercial level. Stay tuned for more details.
200 mm
Are notched
Have a major and minor flat
G = 150 mm
F = 100 mm
Wolfspeed is not yet selling 200mm at the commercial level. Stay tuned for more details.
200 mm
Wolfspeed only offers circular wafers. We do not offer squares or boules. Both wafer diameters are 500 microns thick.
Diameter: HPSI
Wafers are “off-axis” such that the wafer surface normal is oriented 4 degrees off of the [0001] plane, towards the [11-20] direction.
Wafers are “on-axis” such that the wafer surface normal is parallel to the [0001] direction.
4 = 4° Off axis (n-type only)
0 = On Axis (HPSI only)
Wolfspeed is not yet selling 200mm at the commercial level. Stay tuned for more details.
200 mm
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
Surface Orientation: HPSI
Both Wolfspeed’s products, conductive and semi-insulating SiC substrates, are 4H polytype. Wolfspeed does not offer 6H-SiC.
4 = 4H-SiC
Polytype
Wafers are “off-axis” such that the wafer surface normal is oriented 4 degrees off of the [0001] plane, towards the [11-20] direction.
4 = 4° Off axis (n-type only)
Wafers are “on-axis” such that the wafer surface normal is parallel to the [0001] direction.
0 = On Axis (HPSI only)
Wolfspeed is not yet selling 200mm at the commercial level. Stay tuned for more details.
200 mm
Surface Orientation: n-type
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
n-type wafers are SiC wafers doped with nitrogen to encourage conductivity. They are used primarily for Power devices.
R = >1E6 cm (HPSI)
Impurities in Wolfspeed’s semi-insulating silicon carbide wafers are at background levels, hence our product is a high-purity, semi-insulating (HPSI) substrate. HPSI are preferred substrate for GaN and other nitride epitaxy RF devices due to improved thermal conductivity over semi-insulating SiC wafers doped with deep-level impurities.
C = 0.015 - 0.028Ω cm (n-type)
Resistivity
Please contact Materials Sales for information.
Other
Please contact Materials Sales for information.
Other
Impurities in Wolfspeed’s semi-insulating silicon carbide wafers are at background levels, hence our product is a high-purity, semi-insulating (HPSI) substrate. HPSI are preferred substrate for GaN and other nitride epitaxy RF devices due to improved thermal conductivity over semi-insulating SiC wafers doped with deep-level impurities.
R = >1E6 cm (HPSI)
n-type wafers are SiC wafers doped with nitrogen to encourage conductivity. They are used primarily for Power devices.
C = 0.015 - 0.028Ω cm (n-type)
Resistivity
C1 = 350µm Thickness
Thickness
Defectivity
Measured with ANSI-certified non-contact tools at the center of each individual wafer.
0 = Standard MPD
U = Ultra-Low MPD
(≤1/cm²)
B = Low BPD (≤1500/cm²),
MPD (≤1/cm²)
C
0
4
G
F
P
N
4
W
T
R
R
Better value
Expected higher yield
R = Research
P = Production
Is your application produced at commercial scale or a limited use research application?
C1
-
0
-
V
-
U
-
B
-
0 = Standard MPD
Defectivity
0
-
2 = Double-side Polish, Si-Face CMP
Polarity
2
2 = Double-side Polish, Si-Face CMP
Polarity
2
S = Standard SiC (<30µm)
0 = None
Is this Epi related?
T = Thick SiC (≥30µm)
G = GaN Epitaxy
0
S
T
G
6
G = GaN Epitaxy
T = Thick SiC (≥30µm)
S = Standard SiC (<30µm)
0 = None
Is this Epi related?
0
S
T
G
B = Low BPD (≤1500/cm²),
MPD (≤1/cm²)
U = Ultra-Low MPD
(≤1/cm²)
6 = Double-side Polish, C-Face CMP
A = HEMT ≤ 25% Al
GaN Epitaxy
E = HEMT > 25% Al
I = Other HEMT
Based on your selections, below is the part number that you require.
If you have any questions or need help ordering, please contact Material Sales.
0
A
E
I
1 = 1 Layer
SiC Epitaxy
2 = 2 Layer
3 = 3 Layer
4 = 4 Layer
1
2
3
4
I
E
A
0
4
3
2
1
4 = 4 Layer
3 = 3 Layer
2 = 2 Layer
1 = 1 Layer
SiC Epitaxy
I = Other HEMT
E = HEMT > 25% Al
A = HEMT ≤ 25% Al
GaN Epitaxy
If you have any questions or need help ordering, please contact Material Sales.
Based on your selections, below is the part number that you require.
4
3
2
1
I
E
A
0
G
T
S
0
6
2
B
-
U
-
V
-
0
-
If you have any questions or need help ordering, please contact Material Sales.
Based on your selections, below is the part number that you require.
I = Other HEMT
E = HEMT > 25% Al
A = HEMT ≤ 25% Al
GaN Epitaxy
4 = 4 Layer
3 = 3 Layer
2 = 2 Layer
1 = 1 Layer
SiC Epitaxy
T = Thick SiC (≥30µm)
S = Standard SiC (<30µm)
0 = None
Is this Epi related?
2 = Double-side Polish, Si-Face CMP
Polarity
B = Low BPD (≤1500/cm²),
MPD (≤1/cm²)
U = Ultra-Low MPD
(≤1/cm²)
0 = Standard MPD
Defectivity
Please contact Materials Sales for information.
Other
Impurities in Wolfspeed’s semi-insulating silicon carbide wafers are at background levels, hence our product is a high-purity, semi-insulating (HPSI) substrate. HPSI are preferred substrate for GaN and other nitride epitaxy RF devices due to improved thermal conductivity over semi-insulating SiC wafers doped with deep-level impurities.
R = >1E6 cm (HPSI)
n-type wafers are SiC wafers doped with nitrogen to encourage conductivity. They are used primarily for Power devices.
C = 0.015 - 0.028Ω cm (n-type)
Resistivity
Wafers are “off-axis” such that the wafer surface normal is oriented 4 degrees off of the [0001] plane, towards the [11-20] direction.
4 = 4° Off axis (n-type only)
Wafers are “on-axis” such that the wafer surface normal is parallel to the [0001] direction.
0 = On Axis (HPSI only)
Wolfspeed is not yet selling 200mm at the commercial level. Stay tuned for more details.
200 mm
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
Surface Orientation: n-type
N
-
4
3
2
1
I
E
A
0
G
T
S
0
2
0
-
If you have any questions or need help ordering, please contact Material Sales.
Based on your selections, below is the part number that you require.
I = Other HEMT
E = HEMT > 25% Al
A = HEMT ≤ 25% Al
GaN Epitaxy
4 = 4 Layer
3 = 3 Layer
2 = 2 Layer
1 = 1 Layer
SiC Epitaxy
G = GaN Epitaxy
T = Thick SiC (≥30µm)
S = Standard SiC (<30µm)
0 = None
Is this Epi related?
6 = Double-side Polish, C-Face CMP
2 = Double-side Polish, Si-Face CMP
Polarity
B = Low BPD (≤1500/cm²),
MPD (≤1/cm²)
U = Ultra-Low MPD
(≤1/cm²)
0 = Standard MPD
Defectivity
Please contact Materials Sales for information.
Other
Impurities in Wolfspeed’s semi-insulating silicon carbide wafers are at background levels, hence our product is a high-purity, semi-insulating (HPSI) substrate. HPSI are preferred substrate for GaN and other nitride epitaxy RF devices due to improved thermal conductivity over semi-insulating SiC wafers doped with deep-level impurities.
C = 0.015 - 0.028Ω cm (n-type)
n-type wafers are SiC wafers doped with nitrogen to encourage conductivity. They are used primarily for Power devices.
R = >1E6 cm (HPSI)
Resistivity
Wafers are “off-axis” such that the wafer surface normal is oriented 4 degrees off of the [0001] plane, towards the [11-20] direction.
4 = 4° Off axis (n-type only)
Wafers are “on-axis” such that the wafer surface normal is parallel to the [0001] direction.
0 = On Axis (HPSI only)
Wolfspeed is not yet selling 200mm at the commercial level. Stay tuned for more details.
200 mm
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
Surface Orientation: HPSI
N = 500µm Thickness w/ notch
Measured with ANSI-certified non-contact tools at the center of each individual wafer.
Thickness
N = 500µm Thickness w/ notch
C1 = 350µm Thickness
G = GaN Epitaxy
(n-type only)
(HPSI only)
(n-type only)
(HPSI only)
Please copy and paste the part number into the form field.
Primary & secondary flat
F = 100 mm
Wolfspeed no longer offers 100 mm n-type products.
100 mm
