Microchip Memory Offerings
1 Kb
4 Kb
64 Kb
1 Mb
4 Mb
64 Mb
Volatile
High Reliability, Outstanding Quality
EEPROM
Industry's Fastest Erase, High Reliability
NOR Flash Memory
Up to 4 Mbit
High Endurance and Data Retention
Available in I C, SPI, Microwire, Single-Wire and UNI/O Bus Modes
Explore Microchip's wide range of memory technologies, each with their own unique characteristics, and find out which is most suitable for your application
Serial EEPROMs are low-power, nonvolatile memory devices with robust operating ranges. Their small size and byte alterability make them ideal for configuration, calibration and data logging.
EEPROM
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1 Mbit to 64 Mbit
1.8V and 3V options
Serial and Parallel Options
Fast Erase Times
High Speed
Low Cost per Bit
Ideal for firmware storage, these devices are manufactured using proprietary SuperFlash technology, which significantly improves performance (erase any block in less than 25 ms) and reliability (100 years data retention) while lowering power consumption.
NOR Flash
I C: 4 Kbit to 16 Kbit
Unlimited Endurance
High Speed
EERAM is a nonvolatile SRAM with a shadow EEPROM backup. Data is automatically backed up onto the EEPROM at power down using a small external capacitor. Unlike NVSRAM, no external battery is needed. This device combines the reliability of an EEPROM with the performance of an SRAM.
EERAM
64 Kbit to 4 Mbit
SPI Bus
Instantaneous Writes
Battery-Backed Options
Low-Cost 8-pin Packages
Serial SRAM is a stand-alone volatile memory that offers an easy and inexpensive way to add more RAM to your application. These 8-pin devices have unlimited endurance and zero write times.
Serial SRAM
EERAM
Unlimited
Endurance
High Performance
Serial SRAM
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4 Mb
2 Mb
64 Kb
16 Kb
4 Kb
1 Kb
Parallel
Serial
EEPROM Offerings
1 Mb
Density
Density
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Up to 4Mbit
High Endurance and Data Retention
Available in I2C, SPI, Microwire, Single-Wire and UNI/O® bus modes
Click the categories at left to learn more about our industry-leading portfolio of world-class serial EEPROMs.
EEPROMs
I C EEPROM
2
SPI EEPROM
Microwire EEPROM
Parallel EEPROM
UNI/O EEPROM
Single-Wire EEPROM
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128 bit to 2 Mbit
Up to 3.4Mhz Clock Speed
Two I/O pins – Clock (CLK) and Data (SDA)
Built-in device addressing
Low noise susceptibility
I C EEPROM
2
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1 Kbit to 4 Mbit
Up to 20Mhz Clock Speed
Four I/O pins – Clock (SCK), Chip Select (CS), Data-In (DI), Data-Out (DO)
Full-Duplex
SPI EEPROM
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1 Kbit to 16 Kbit
Up to 3Mhz Clock Speed
Four I/O pins – Clock (CLK), Chip Select (CS), Data-In (DI), Data-Out (DO)
8-bit or 16-bit WORD size
Microwire EEPROM
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1 Kbit to 16 Kbit
Up to 100KHz Clock Speed
Only one I/O pin
UNI/O EEPROM
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1 Kbit
Up to 125 Kbps
Only one I/O pin
Parasitically powered from I/O
Single-Wire EEPROM
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64 Kbit to 1 Mbit with 2.7V and 5V options
Parallel data access, similar to static RAM for read and write cycles
Parallel EEPROMs provide robust nonvolatile memory with faster read times than serial EEPROMs for direct code execution and high-reliability data storage in telecommunications, avionics, military and other applications.
Parallel EEPROM
®
2
®
2
Non-Volatile
16 Kb